研討會
4月8日-9日International Workshop on Wide-Band-Gap Power Electronics 2013
- 發佈日期:
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- 瀏覽人次: 547
- 活動日期: 102年4月8日-9日
- 活動地點: 工業技術研究院 中興院區 51館422國際會議廳
- 主辦單位: 寬能隙電力電子研發聯盟WPEC
- 聯絡人姓名: 洪尉淇 小姐
- 聯絡人電話: 03-5912409
- 聯絡人傳真: 03-5917690
- 聯絡人Email: weichi_hong@itri.org.tw
- 相關連結: http://seminar.itri.org.tw/onlinereg/RegAdd.aspx?msgno=51130008
In the last decade the technology fast moved to a critical point of soliciting better physical and electrical properties of wide band gap semiconductors. With SiC and GaN diodes on the market and more active devices at the corner, we are called for intense communication among industry, academia, research institutes and policy makers to facilitate the development and deploy of this technology.
International Workshop on WBG Power Electronics (IWWPE) 2013 will be held at ITRI Hsinchu campus, Taiwan on April 8 and 9, 2013, aimed to build a platform for sharing experiences, opinions and expectations in this field. In this workshop a dozen of experts on power electronics Technology Trend/Application, Device/Fabrication, Package/Reliability, Materials/Equipment, and vendors for the WBG power electronics will be invited to give lectures. She/He interested in this technology is cordially welcome to participate in this workshop.
April 8, 2013 (Monday)
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09:00~09:30
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Registration
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09:30~09:40
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Opening/ Dr. C. T. Liu, EOL/ITRI
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Time
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Title of talk
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Speaker
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Affiliation
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Session A: Technology Trend/ Application
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09:40~10:20
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Evolution of Silicon Power Devices and Future Possibility
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Dr. Akio Nakagawa
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Nakagawa Consulting Office, Japan
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10:20~11:00
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Wide Bandgap Semiconductor Devices for Future Energy Applications
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Dr. Jih-Sheng Lai
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Virginia Tech, USA
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11:00~11:20
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Coffee Break
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11:20~12:00
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Role of Advanced Power Devices for Green Electronics Age
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Dr. Hiromichi Ohashi
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Advanced Industrial Science and Technology, Japan
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12:00~13:30
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Lunch
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Session B: Device/ Fabrication
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13:30~14:10
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Progress, Opportunities, and Challenges for Commercialization of SiC Power Devices
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Dr. James Cooper
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Purdue University, USA
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14:10~14:50
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Pushing the Performance Bar – 600V Class GaN Power Devices Application Case Studies
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Mr. Zan Huang
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Transphorm Inc., USA
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14:50~15:10
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Coffee Break
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15:10~15:50
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Recent Progress on GaN-based Power Devices
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Dr. Nobuyuki Otsuka
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Panasonic, Japan
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15:50~16:30
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Current Process Issues for Silicon Carbide Devices
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Dr. Ander Hallen
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KTH University, Sweden
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16:30~18:00
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Wrap up
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18:00~20:00
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Banquet (Venue: 4th floor of Royal Hsinchu hotel)
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April 9, 2013 (Tuesday)
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Time
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Title of talk
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Speaker
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Affiliation
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Session C: Package/ Reliability
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09:30~10:10
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Wide Bandgap Devices: Are There Thermal Testing Challenges?
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Dr. András Poppe
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Mentor Graphics
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10:10~10:50
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Reliability of Power Electronic
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Dr. Yong Liu
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Fairchild Semiconductor Corp.
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10:50~11:10
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Coffee Break
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11:10~11:50
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SiC Packaging Technology
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Dr. Jack Bourne
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Arkansas Power Electronics International, Inc., USA
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11:50~13:10
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Lunch
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Session D: Material/Equipment
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13:10~13:50
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MOCVD Technology for GaN on Si Power Management Device Manufacturing
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Dr. Christian Geng
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AIXTRON Taiwan Co., Ltd.
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13:50~14:30
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Growth of AlGaN/GaN HEMT on 200mm Si with High Growth Rate (AlGaN/AlN) SLS Buffer Layer by Using 6X8" MOCVD Reactor
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Dr. Koh Matsumoto
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Taiyo Nippon Sanso EMC Ltd., Japan
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14:30~15:10
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The Latest Trend of Semiconductor SiC Wafer Technology and Its Challenges for the Future
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Dr. Wataru Ohashi
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Nippon Steel & Sumikin Materials Co., Ltd., Japan
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15:10~15:30
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Coffee Break
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15:30~17:00
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Panel Discussion / Hosted byDr. C. F. Huang
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附件
| 檔案名稱 | 檔案大小 | 更新日期 | 檔案下載 |
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| 活動DM | 121kb | DOC |
